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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE FS30VSJ-2 OUTLINE DRAWING 1.5MAX. Dimensions in mm 4.5 1.3 r 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 4V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .................................................................. 84 ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 80ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 20 30 120 30 30 120 45 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A A A A W C C g Feb.1999 L = 100H (1.5) MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 65 70 0.98 23 1800 230 120 17 46 135 95 1.0 -- 80 Max. -- 0.1 0.1 2.0 84 91 1.26 -- -- -- -- -- -- -- -- 1.5 2.77 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100ms 1ms TC = 25C Single Pulse DC 10ms 40 30 tw = 10ms 20 10 0 0 50 100 150 200 100 7 5 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 10V 6V 5V 4V 20 TC = 25C Pulse Test VGS = 10V 5V 4V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 40 16 3V 30 TC = 25C Pulse Test 12 20 3V 8 2.5V 10 PD = 45W 4 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 TC = 25C Pulse Test VGS = 4V 4.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 50A 80 10V 3.0 30A 60 2.0 40 1.0 10A 20 0 0 0 2 4 6 8 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 75C 125C VDS = 10V Pulse Test TC = 25C DRAIN CURRENT ID (A) 30 20 10 FORWARD TRANSFER ADMITTANCE yfs (S) 40 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 7 5 3 2 Tch = 25C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 tf Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50 td(off) Ciss 103 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Coss tr 102 7 5 3 2 Crss td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 Tch = 25C ID = 30A 8 40 6 VDS = 20V 50V 30 4 80V 20 TC = 125C 75C 25C 2 10 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 0.1 5 3 2 10-1 7 5 3 2 1.2 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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